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Same model may have multiple batches, images only for reference.
SI3434DV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI3434DV-T1-GE3

Part No SI3434DV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 4.6A 6-TSOP
Datasheet
SI3434DV-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 600mV @ 1mA (Min)
Max Gate Charge 12nC @ 4.5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.14W (Ta)
Maximum Rds On at Id,Vgs 34 mOhm @ 6.1A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 211626-SI3434DV-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI3434DV-T1-GE3 CAD Model

Description

The Vishay SI3434DV-T1-GE3 is an N-Channel MOSFET designed for use in discrete semiconductor products.

  • Package: Reel - TR
  • Mounting: SMD (SMT)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 4.6A (Ta)
  • Gate-Source Threshold Voltage: 600mV @ 1mA (Min)
  • Max Gate Charge: 12nC @ 4.5V
  • Temperature Range: -55°C to 150°C (TJ)
  • ECCN: EAR99
  • Popularity: Medium
  • Case / Package: 6-TSOP

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Pricing & Ordering

Quantity Unit Price Ext. Price
320+ $0.1813 $58.0160
780+ $0.1490 $116.2200
1,200+ $0.1444 $173.2800
1,655+ $0.1398 $231.3690
2,140+ $0.1351 $289.1140
2,860+ $0.1213 $346.9180
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Availability: 4,730 pieces
MOQ: 320 pcs
Order Increment : 1 pcs
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