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Same model may have multiple batches, images only for reference.
SI3454ADV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI3454ADV-T1-GE3

Part No SI3454ADV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 3.4A 6TSOP
Datasheet
SI3454ADV-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 15nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.14W (Ta)
Maximum Rds On at Id,Vgs 60 mOhm @ 4.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 1095834-SI3454ADV-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI3454ADV-T1-GE3 CAD Model

Description

The Vishay SI3454ADV-T1-GE3 is an N-channel MOSFET that has a maximum power dissipation of 1.14W (Ta).

  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 15nC @ 10V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Maximum Rds On: 60 mOhm @ 4.5A, 10V
  • Supply and Demand: Sufficient
  • Manufacturer: Vishay

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9794 $58.7640
145+ $0.8039 $116.5655
225+ $0.7785 $175.1625
310+ $0.7542 $233.8020
400+ $0.7288 $291.5200
535+ $0.6537 $349.7295
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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