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Same model may have multiple batches, images only for reference.
SI3464DV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI3464DV-T1-GE3

Part No SI3464DV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 8A 6-TSOP
Datasheet
SI3464DV-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 18nC @ 5V
Max Input Capacitance 1065pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 2W (Ta), 3.6W (Tc)
Maximum Rds On at Id,Vgs 24 mOhm @ 7.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 028435-SI3464DV-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI3464DV-T1-GE3 CAD Model

Description

The Vishay MOSFET is a N-Channel transistor that is mounted SMD (SMT).

  • Maximum Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 8A (Tc)
  • Maximum Gate-Source Voltage: ±8V
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Rds On at Id,Vgs: 24 mOhm @ 7.5A, 4.5V
  • Maximum Gate Charge: 18nC @ 5V
  • Maximum Input Capacitance: 1065pF @ 10V
  • Drive Voltage: 1.8V, 4.5V
  • Power Dissipation: 2W (Ta), 3.6W (Tc)
  • Popularity: medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.4366 $50.2090
280+ $0.3583 $100.3240
435+ $0.3471 $150.9885
600+ $0.3359 $201.5400
770+ $0.3247 $250.0190
1,035+ $0.2911 $301.2885
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,000 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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