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Same model may have multiple batches, images only for reference.
SI3465DV-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI3465DV-T1-E3

Part No SI3465DV-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 3A 6-TSOP
Datasheet
SI3465DV-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 5.5nC @ 5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.14W (Ta)
Maximum Rds On at Id,Vgs 80 mOhm @ 4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 1095844-SI3465DV-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI3465DV-T1-E3 CAD Model

Description

The SI3465DV-T1-E3 is a P-channel MOSFET from Vishay.

  • Applications: power management
  • Maximum Drain-Source Voltage: 20V
  • Continuous Drain Current: 3A @ 25°C
  • Maximum On-Resistance: 80 mOhm @ 4A and 10V
  • Package: 6-TSOP
  • Power Dissipation: 1.14W @ Ta
  • Applications: power management applications in the automotive industry

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