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SI3477DV-T1-GE3

Part No SI3477DV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 8A 6-TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 90nC @ 10V
Max Input Capacitance 2600pF @ 6V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 2W (Ta), 4.2W (Tc)
Maximum Rds On at Id,Vgs 17.5 mOhm @ 9A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 1095854-SI3477DV-T1-GE3
Family Name Si3477DV
Introduction Date July 16, 2010
ECCN EAR99
Country of Origin China
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI3477DV-T1-GE3 CAD Model

Description

The Si3477DV-T1-GE3 is a P-channel MOSFET manufactured by Vishay.

  • Power Dissipation: 2W (Ta) and 4.2W (Tc)
  • Drain-Source Breakdown Voltage: 12V
  • Type: Discrete semiconductor product
  • Drive Voltage: 1.8V and 4.5V
  • Maximum Rds On @ Id,Vgs: 17.5 mOhm @ 9A, 4.5V
  • Maximum Gate-Source Voltage: ±10V
  • Package: 6-TSOP
  • Dimensions: SOT-23-6 Thin and TSOT-23-6 dimensions
  • Supply and Demand Status: Limited
  • Estimated EOL date: 2024
  • ECCN: EAR99

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Pricing & Ordering

Quantity Unit Price Ext. Price
140+ $0.4267 $59.7380
330+ $0.3501 $115.5330
515+ $0.3393 $174.7395
705+ $0.3283 $231.4515
915+ $0.3173 $290.3295
1,220+ $0.2845 $347.0900
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,300 pieces
MOQ: 140 pcs
Order Increment : 1 pcs
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