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Same model may have multiple batches, images only for reference.
SI3483DV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI3483DV-T1-GE3

Part No SI3483DV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 4.7A 6-TSOP
Datasheet
SI3483DV-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 35nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.14W (Ta)
Maximum Rds On at Id,Vgs 35 mOhm @ 6.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 1095857-SI3483DV-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI3483DV-T1-GE3 CAD Model

Description

The Vishay SI3483DV-T1-GE3 is an obsolete (EOL) electronic component that is used for discrete semiconductor products.

  • Technology: MOSFET
  • Polarity: P-Channel
  • Power Dissipation (Max): 1.14W (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Mounting Type: SMD (SMT)
  • Package: 6-TSOP
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 4.7A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 35nC @ 10V

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