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Same model may have multiple batches, images only for reference.
SI3499DV-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI3499DV-T1-E3

Part No SI3499DV-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 8V 5.3A 6TSOP
Datasheet
SI3499DV-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay
Series TrenchFET®
Package Tape & Reel
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 8 V
Current - Continuous Drain (Id) @ 25°C 5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 23mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id 750mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 4.5 V
Vgs (Max) ±5V
Power Dissipation (Max) 1.1W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
Base Product Number SI3499
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 666275-SI3499DV-T1-E3
Ultra Librarian 3D Model Ultra Librarian SI3499DV-T1-E3 CAD Model

Description

The Vishay SI3499DV-T1-E3 is a P-Channel MOSFET designed for high-power applications.

  • Series: TrenchFET series
  • Drain-to-source voltage (Vdss): 8V
  • Continuous drain current (Id) @ 25°C: 5.3A
  • On-resistance (Rds On) @ 7A and 4.5V: 23mOhm
  • Suitable for: surface mount applications
  • Package: compact SOT-23-6 Thin package

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6680 $60.1200
215+ $0.5482 $117.8630
330+ $0.5310 $175.2300
450+ $0.5139 $231.2550
585+ $0.4968 $290.6280
780+ $0.4454 $347.4120
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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