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SI3590DV-T1-E3

Part No SI3590DV-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N/P-CH 30V 2.5A/1.7A 6-Pin TSOP T/R / MOSFET N/P-CH 30V 2.5A 6TSOP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2.5A, 1.7A
Maximum Rds On at Id,Vgs 77 mOhm @ 3A, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 4.5nC @ 4.5V
Maximum Power Dissipation 830mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 028441-SI3590DV-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name Si3590DV
Introduction Date November 01, 2002
ECCN EAR99
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian SI3590DV-T1-E3 CAD Model

Description

The Vishay Si3590DV is a N and P-Channel FET with a logic level gate feature.

  • Package: 6-TSOP
  • Maximum Power Dissipation: 830mW
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current at 25°C: 2.5A and 1.7A
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate Charge: 4.5nC @ 4.5V
  • Maximum Input Capacitance: Not specified
  • Maximum Rds On at Id,Vgs: 77 mOhm @ 3A, 4.5V
  • Status: Common-used part
  • Popularity: High
  • Estimated EOL date: 2027
  • ECCN: EAR99
  • Alternative Parts: NTGD4167CT1G, CPH6614-TL-E, CPH6614, and CPH6614-TL-H

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.4587 $50.4570
270+ $0.3764 $101.6280
415+ $0.3646 $151.3090
570+ $0.3529 $201.1530
735+ $0.3411 $250.7085
985+ $0.3058 $301.2130
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 77,000 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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