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Same model may have multiple batches, images only for reference.
SI3812DV-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI3812DV-T1-E3

Part No SI3812DV-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 2A 6-TSOP
Datasheet
SI3812DV-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 600mV @ 250μA (Min)
Max Gate Charge 4nC @ 4.5V
Maximum Gate-Source Voltage ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 830mW (Ta)
Maximum Rds On at Id,Vgs 125 mOhm @ 2.4A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 1095863-SI3812DV-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI3812DV-T1-E3 CAD Model

Description

The Vishay SI3812DV-T1-E3 is an N-channel MOSFET with a Schottky diode (isolated) feature.

  • Maximum Drain-Source Breakdown Voltage: 20V
  • Maximum Continuous Drain Current: 2A @ 25°C
  • Package: 6-TSOP
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.6260 $59.4700
225+ $0.5140 $115.6500
350+ $0.4978 $174.2300
480+ $0.4816 $231.1680
625+ $0.4655 $290.9375
830+ $0.4181 $347.0230
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 190 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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