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Same model may have multiple batches, images only for reference.
SI3812DV-T1
Same model may have multiple batches, images only for reference.

SI3812DV-T1

Part No SI3812DV-T1
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description N-Channel MOSFETs 20V 2.4A 1.15
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TSOP
Continuous Drain Current (ID) 2.4 A
Drain to Source Breakdown Voltage 20 V
Drain to Source Resistance 125 mΩ
Element Configuration Single
Fall Time 30 ns
Gate to Source Voltage (Vgs) 12 V
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Number of Pins 6
Power Dissipation 830 mW
Rise Time 30 ns
RoHS Non-Compliant
Turn-Off Delay Time 14 ns
Voltage Rating (DC) 20 V
Win Source Part Number 1028557-SI3812DV-T1
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SI3812DV-T1 CAD Model

Description

The Vishay SI3812DV-T1 is a power MOSFET transistor designed for use in RF applications.

  • Maximum Operating Temperature: 150 °C
  • Minimum Operating Temperature: -55 °C
  • Element Configuration: Single
  • Continuous Drain Current: 2.4 A
  • Drain to Source Breakdown Voltage: 20 V
  • Drain to Source Resistance: 125 mΩ
  • Turn-Off Delay Time: 14 ns
  • Rise Time: 30 ns
  • Fall Time: 30 ns
  • Power Dissipation: 830 mW
  • Voltage Rating: 20 V
  • Case/Package: TSOP
  • RoHS: Non-Compliant

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.1499 $63.2445
125+ $0.9436 $117.9500
190+ $0.9141 $173.6790
265+ $0.8847 $234.4455
340+ $0.8552 $290.7680
455+ $0.7667 $348.8485
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Availability: 110 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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