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Same model may have multiple batches, images only for reference.
SI3850ADV-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI3850ADV-T1-E3

Part No SI3850ADV-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V 1.4A 6TSOP
Datasheet
SI3850ADV-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel, Common Drain
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.4A, 960mA
Maximum Rds On at Id,Vgs 300 mOhm @ 500mA, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 1.4nC @ 4.5V
Maximum Power Dissipation 1.08W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 1095865-SI3850ADV-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI3850ADV-T1-E3 CAD Model

Description

This electronic component is a product of Vishay and has a Win Source Part Number of 1095865-SI3850ADV-T1-E3.

  • Maximum Rds On @ Id,Vgs: 300 mOhm @ 500mA, 4.5V
  • Temperature Range for Operating: -55°C to 150°C (TJ)
  • Case / Package: 6-TSOP
  • Status: Obsolete (EOL)

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