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SI3900DV-T1-E3

Part No SI3900DV-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 2A 6-TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2A
Maximum Rds On at Id,Vgs 125 mOhm @ 2.4A, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 4nC @ 4.5V
Maximum Power Dissipation 830mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 028442-SI3900DV-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI3900DV-T1-E3 CAD Model

Description

The Vishay 028442-SI3900DV-T1-E3 is a dual N-channel FET that has a logic level gate.

  • Category: Discrete Semiconductor Products
  • Operating Temperature Range: -55°C to 150°C
  • Maximum Power Dissipation: 830mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current at 25°C: 2A
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate Charge: 4nC @ 4.5V
  • Maximum Rds On at Id,Vgs: 125 mOhm @ 2.4A, 4.5V
  • Package: 6-TSOP

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Pricing & Ordering

Quantity Unit Price Ext. Price
140+ $0.3621 $50.6940
340+ $0.2972 $101.0480
525+ $0.2879 $151.1475
720+ $0.2786 $200.5920
930+ $0.2693 $250.4490
1,245+ $0.2414 $300.5430
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 216,000 pieces
MOQ: 140 pcs
Order Increment : 1 pcs
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