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Same model may have multiple batches, images only for reference.
SI3900DV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI3900DV-T1-GE3

Part No SI3900DV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 2A 6-TSOP
Datasheet
SI3900DV-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2A
Maximum Rds On at Id,Vgs 125 mOhm @ 2.4A, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 4nC @ 4.5V
Maximum Power Dissipation 830mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 028443-SI3900DV-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI3900DV-T1-GE3 CAD Model

Description

The Vishay SI3900DV-T1-GE3 is a dual N-channel FET with a logic level gate.

  • Maximum Power Dissipation: 830mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 2A @ 25°C
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Gate Charge: 4nC @ 4.5V
  • Maximum Input Capacitance: N/A
  • Package: 6-TSOP case
  • Operating Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
290+ $0.2021 $58.6090
695+ $0.1663 $115.5785
1,080+ $0.1605 $173.3400
1,485+ $0.1559 $231.5115
1,925+ $0.1502 $289.1350
2,565+ $0.1351 $346.5315
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 290 pcs
Order Increment : 1 pcs
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