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SI3948DV-T1-E3

Part No SI3948DV-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 6-TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Maximum Rds On at Id,Vgs 105 mOhm @ 2.5A, 10V
Gate-Source Threshold Voltage 1V @ 250μA (Min)
Max Gate Charge 3.2nC @ 5V
Maximum Power Dissipation 1.15W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 108473-SI3948DV-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI3948DV-T1-E3 CAD Model

Description

The Vishay SI3948DV-T1-E3 is a dual N-channel, logic level gate FET with a maximum power dissipation of 1.15W.

  • Maximum Gate Charge: 3.2nC @ 5V
  • Maximum Rds On @ Id,Vgs: 105 mOhm @ 2.5A, 10V
  • Package: 6-TSOP
  • Temperature Range: -55°C to 150°C
  • Popularity: Medium
  • Supply and Demand Status: balanced
  • Ideal for: applications that require high-speed switching and low on-resistance such as power management, motor control, and lighting control.

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Pricing & Ordering

Quantity Unit Price Ext. Price
190+ $0.3114 $59.1660
455+ $0.2556 $116.2980
700+ $0.2476 $173.3200
965+ $0.2395 $231.1175
1,250+ $0.2316 $289.5000
1,670+ $0.2077 $346.8590
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,970 pieces
MOQ: 190 pcs
Order Increment : 1 pcs
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