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SI3993CDV-T1-GE3

Part No SI3993CDV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 30V 2.9A 6-TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2.9A
Maximum Rds On at Id,Vgs 111 mOhm @ 2.5A, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 8nC @ 10V
Max Input Capacitance 210pF @ 15V
Maximum Power Dissipation 1.4W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 064459-SI3993CDV-T1-GE3
Family Name Si3993CDV
Introduction Date August 27, 2012
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian SI3993CDV-T1-GE3 CAD Model

Description

The SI3993CDV-T1-GE3 is a dual P-channel FET that is designed to provide high performance and reliability for a wide range of applications.

  • Benefit: high power dissipation and low Rds On, this FET is an excellent choice for applications that require high performance and reliability.
  • Versatility: part of a family of FETs that are designed to meet the needs of a wide range of applications, making it a versatile and flexible choice for your next project.
  • Maximum Power Dissipation: 1.4W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 2.9A
  • Case/Package: 6-TSOP
  • Popularity: High

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Pricing & Ordering

Quantity Unit Price Ext. Price
230+ $0.2538 $58.3740
555+ $0.2083 $115.6065
860+ $0.2018 $173.5480
1,185+ $0.1952 $231.3120
1,530+ $0.1887 $288.7110
2,050+ $0.1692 $346.8600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 38,490 pieces
MOQ: 230 pcs
Order Increment : 1 pcs
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