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SI4101DY-T1-GE3

Part No SI4101DY-T1-GE3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET P-CH 30V 25.7A 8SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Vishay Siliconix
Packaging Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) at 25°C 25.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 6mOhm at 15A, 10V
Vgs(th) (Maximum) at Id 2.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 203nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 8190pF at 15V
Power Dissipation (Maximum) 6W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package 8-SO
Manufacturer Package 8-SOIC
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 804744-SI4101DY-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI4101DY-T1-GE3 CAD Model

Description

The Vishay Siliconix SI4101DY-T1-GE3 is a medium-popularity electronic component with a balanced supply and demand status.

  • Type: P-channel MOSFET
  • Drain-to-Source Voltage (Vdss): 30V
  • Power Dissipation (Maximum): 6W (Tc)
  • Gate Charge (Qg) (maximum) @ Vgs: 203nC @ 10V
  • Input Capacitance (Ciss) (maximum) @ Vds: 8190pF @ 15V
  • Current Continuous Drain (Id) @ 25°C: 25.7A (Tc)
  • Maximum Vgs: ±20V

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7484 $52.3880
165+ $0.6141 $101.3265
255+ $0.5949 $151.6995
350+ $0.5757 $201.4950
450+ $0.5565 $250.4250
605+ $0.4990 $301.8950
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,500 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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