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SI4116DY-T1-E3

Part No SI4116DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 18A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Gate Charge 56nC @ 10V
Max Input Capacitance 1925pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.5W (Ta), 5W (Tc)
Maximum Rds On at Id,Vgs 8.6 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 064463-SI4116DY-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI4116DY-T1-E3 CAD Model

Description

The Vishay MOSFET is a N-Channel power transistor with a drain-source breakdown voltage of 25V and a continuous drain current of 18A @ 25°C.

  • Maximum Rds On @ Id, Vgs: 8.6 mOhm @ 10A, 10V
  • Maximum Gate-Source Voltage: ±12V
  • Gate-Source Threshold Voltage: 1.4V @ 250μA
  • Maximum Input Capacitance: 1925pF @ 15V
  • Max Gate Charge: 56nC @ 10V
  • Package: 8-SO
  • Dimension: 8-SOIC (0.154", 3.90mm Width)
  • Suitable for: discrete semiconductor products such as power supplies and DC-DC converters.

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Pricing & Ordering

Quantity Unit Price Ext. Price
255+ $0.2275 $58.0125
620+ $0.1871 $116.0020
960+ $0.1813 $174.0480
1,320+ $0.1756 $231.7920
1,705+ $0.1698 $289.5090
2,295+ $0.1513 $347.2335
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 35,800 pieces
MOQ: 255 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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