The Vishay 028448-SI4116DY-T1-GE3 is a N-Channel MOSFET designed for use in Discrete Semiconductor Products.

• Maximum Power Dissipation: 2.5W (Ta), 5W (Tc)
• Drain-Source Breakdown Voltage: 25V
• Continuous Drain Current @ 25°C: 18A (Tc)
• Gate-Source Threshold Voltage: 1.4V @ 250μA
• Maximum Gate Charge: 56nC @ 10V
• Maximum Input Capacitance: 1925pF @ 15V
• Maximum Rds On @ Id,Vgs: 8.6 mOhm @ 10A, 10V
• Package: 8-SOIC (0.154", 3.90mm Width)
• Mounting: SMD (SMT) technology
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
• Temperature Range: -55°C to 150°C (TJ)
• Status: common-used part with high popularity and sufficient supply and demand status.
• EOL Date: 2027