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Same model may have multiple batches, images only for reference.
SI4160DY-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SI4160DY-T1-GE3

Part No SI4160DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 25.4A 8-SOIC
Datasheet
SI4160DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 25.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.4V @ 250μA
Max Gate Charge 54nC @ 10V
Max Input Capacitance 2071pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 5.7W (Tc)
Maximum Rds On at Id,Vgs 4.9 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 028454-SI4160DY-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI4160DY-T1-GE3 CAD Model

Description

The Vishay 028454-SI4160DY-T1-GE3 is an N-Channel MOSFET that is designed for use in discrete semiconductor products.

  • Supply and Demand Status: Sufficient
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Rds On at Id,Vgs: 4.9 mOhm @ 15A, 10V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Package: 8-SO

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Pricing & Ordering

Quantity Unit Price Ext. Price
100+ $0.5206 $52.0600
235+ $0.4272 $100.3920
365+ $0.4138 $151.0370
500+ $0.4005 $200.2500
650+ $0.3871 $251.6150
865+ $0.3471 $300.2415
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 100 pcs
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