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SI4172DY-T1-E3

Part No SI4172DY-T1-E3
Manufacturer Vishay
Catalog Hard To Find
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 10+
Reference case SO-8
Manufacturer Vishay
Manufacturer Homepage www.vishay.com
Win Source Part Number 712127-SI4172DY-T1-E3
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4172DY-T1-E3 CAD Model

Description

The SI4172DY-T1-E3 is a P-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay. This power MOSFET is designed for a wide range of switching and power management applications. It is known for its low on-resistance and fast switching speed, making it suitable for efficient power conversion.

Applications

  • DC-DC Converters: Used as a switching element in step-up (boost) and step-down (buck) converters.
  • Load Switching: Controlling power to various loads in electronic systems.
  • Power Management in Portable Devices: Regulating power in smartphones, laptops, and tablets.
  • Motor Control: Controlling the speed and direction of small DC motors.
  • Battery Management Systems (BMS): Protecting and managing battery charging and discharging.

Features

  • Low On-Resistance (RDS(on)): Minimizes power loss due to conduction, improving efficiency.
  • Fast Switching Speed: Enables high-frequency operation in switching applications.
  • Logic-Level Gate Drive: Can be driven directly by low-voltage logic circuits.
  • TrenchFET® Power MOSFET Technology: Provides high power density and efficiency.
  • Lead (Pb)-free and Halogen-free: Compliant with environmental regulations.

Benefits

  • High Efficiency: Low on-resistance reduces power dissipation, leading to higher efficiency in power conversion.
  • Reduced Heat Dissipation: Lower power loss translates to less heat generated, improving system reliability.
  • Simplified Drive Circuitry: Logic-level gate drive simplifies the design of the gate drive circuit.
  • Compact Design: Surface mount package allows for use in space-constrained applications.
  • Environmentally Friendly: Lead-free and halogen-free construction meets environmental standards.

Additional Details

The SI4172DY-T1-E3 has a drain-source voltage (VDS) rating of -30V and a continuous drain current (ID) rating of -7.2A. It is available in a PowerPAK® SO-8 package. The MOSFET also features an avalanche rating, indicating its ability to withstand transient voltage spikes. This P-Channel MOSFET is designed to be used in applications where a low side switch is required and the load is connected to the positive supply rail.

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