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Same model may have multiple batches, images only for reference.
SI4190DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4190DY-T1-GE3

Part No SI4190DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 20A 8-SOIC
Datasheet
SI4190DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Cut Reel
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.8V @ 250μA
Max Gate Charge 58nC @ 10V
Max Input Capacitance 2000pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.5W (Ta), 7.8W (Tc)
Maximum Rds On at Id,Vgs 8.8 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1095904-SI4190DY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4190DY-T1-GE3 CAD Model

Description

The SI4190DY-T1-GE3 is an N-channel MOSFET designed for discrete semiconductor products.

  • Power Dissipation: 3.5W (Ta) and 7.8W (Tc)
  • Mounting: SMD (SMT)
  • Maximum Rds On @ Id, Vgs: 8.8 mOhm @ 15A, 10V
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 20A (Tc)
  • Gate-Source Threshold Voltage: 2.8V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 58nC @ 10V
  • Maximum Input Capacitance: 2000pF @ 50V
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Manufacturer: Vishay

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