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Same model may have multiple batches, images only for reference.
SI4196DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4196DY-T1-GE3

Part No SI4196DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 8A 8SOIC
Datasheet
SI4196DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 22nC @ 8V
Max Input Capacitance 830pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 2W (Ta), 4.6W (Tc)
Maximum Rds On at Id,Vgs 27 mOhm @ 8A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 064476-SI4196DY-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI4196DY-T1-GE3 CAD Model

Description

The supply and demand status of the product is sufficient. The product is a high-quality MOSFET component that is designed to provide optimal performance.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 8A (Tc)

The product is easy to install and is suitable for various electronic applications.

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