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Same model may have multiple batches, images only for reference.
SI4228DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4228DY-T1-E3

Part No SI4228DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 25V 8A 8SO
Datasheet
SI4228DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 8A
Maximum Rds On at Id,Vgs 18 mOhm @ 7A, 10V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 790pF @ 12.5V
Maximum Power Dissipation 3.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1095911-SI4228DY-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI4228DY-T1-E3 CAD Model

Description

The Vishay SI4228DY-T1-E3 is a Dual N-Channel Logic Level Gate FET that is SMD (SMT) mounted and comes in 8-SO packaging.

  • Maximum Power Dissipation: 3.1W
  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current @ 25°C: 8A
  • Gate-Source Threshold Voltage: 1.4V @ 250μA
  • Maximum Gate Charge: 25nC @ 10V
  • Maximum Input Capacitance: 790pF @ 12.5V
  • Suitable for: use in Discrete Semiconductor Products applications
  • Popularity Rating: medium

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