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Same model may have multiple batches, images only for reference.
SI4230DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4230DY-T1-GE3

Part No SI4230DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 8A 8SOIC
Datasheet
SI4230DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8A
Maximum Rds On at Id,Vgs 20.5 mOhm @ 8A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 950pF @ 15V
Maximum Power Dissipation 3.2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 064483-SI4230DY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4230DY-T1-GE3 CAD Model

Description

The SI4230DY-T1-GE3 is an obsolete (EOL) electronic component manufactured by Vishay.

  • Category: discrete semiconductor product
  • FET Type: 2 N-Channel (Dual)
  • Gate Type: logic level gate

The SI4230DY-T1-GE3 is a reliable choice for electronic applications that require a high level of precision and accuracy. It is widely used in various industrial and consumer applications.

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