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Same model may have multiple batches, images only for reference.
SI4276DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4276DY-T1-E3

Part No SI4276DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 8A 8SO
Datasheet
SI4276DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8A
Maximum Rds On at Id,Vgs 15.3 mOhm @ 9.5A, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 26nC @ 10V
Max Input Capacitance 1000pF @ 15V
Maximum Power Dissipation 3.6W, 2.8W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1095912-SI4276DY-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4276DY-T1-E3 CAD Model

Description

The Vishay SI4276DY-T1-E3 is a dual N-channel logic level gate FET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 8A
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Max Gate Charge @ 10V: 26nC
  • Package: 8-SO
  • Maximum Power Dissipation: 3.6W and 2.8W
  • Maximum Rds On @ Id,Vgs: 15.3 mOhm @ 9.5A, 10V
  • Supply and demand status: Balanced

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