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SI4288DY-T1-GE3

Part No SI4288DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 40V 9.2A 8SO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 9.2A
Maximum Rds On at Id,Vgs 20 mOhm @ 10A, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 580pF @ 20V
Maximum Power Dissipation 3.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1095914-SI4288DY-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4288DY-T1-GE3 CAD Model

Description

The SI4288DY-T1-GE3 is a dual N-channel logic level gate FET manufactured by Vishay.

  • Category: discrete semiconductor products
  • Mounting: SMD (SMT)
  • Power Dissipation: 3.1W
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 9.2A @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Max Gate Charge: 15nC @ 10V
  • Max Input Capacitance: 580pF @ 20V
  • Max Rds On @ Id, Vgs: 20 mOhm @ 10A, 10V
  • Supply and Demand Status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5660 $50.9400
190+ $0.5302 $100.7380
295+ $0.5123 $151.1285
420+ $0.4765 $200.1300
550+ $0.4586 $252.2300
685+ $0.4406 $301.8110
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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