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Same model may have multiple batches, images only for reference.
SI4340DY-T1-E3 Vishay
Same model may have multiple batches, images only for reference.

SI4340DY-T1-E3

Part No SI4340DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 7.3A 14SO
Datasheet
SI4340DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 7.3A, 9.9A
Maximum Rds On at Id,Vgs 12 mOhm @ 9.6A, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 15nC @ 4.5V
Maximum Power Dissipation 1.14W, 1.43W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 14-SOIC
Win Source Part Number 099489-SI4340DY-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI4340DY-T1-E3 CAD Model

Description

The SI4340DY-T1-E3 is a dual N-channel logic level gate FET manufactured by Vishay.

  • Maximum Power Dissipation: 1.14W and 1.43W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 7.3A and 9.9A
  • Gate-Source Threshold Voltage: 2V @ 250μA
  • Maximum Gate Charge: 15nC @ 4.5V
  • Maximum Rds on: 12 mOhm @ 9.6A and 10V
  • Compliance: RoHS compliant
  • Package: 14-SOIC package

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