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Same model may have multiple batches, images only for reference.
SI4348DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4348DY-T1-E3

Part No SI4348DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 8A 8-SOIC
Datasheet
SI4348DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 23nC @ 4.5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.31W (Ta)
Maximum Rds On at Id,Vgs 12.5 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1095922-SI4348DY-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4348DY-T1-E3 CAD Model

Description

The SI4348DY-T1-E3 is an N-Channel MOSFET designed for use in power switching applications.

  • Channel Type: N-Channel
  • Maximum Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 8A
  • On-Resistance: Low
  • Suitable for: High current applications
  • Gate Charge: High
  • Suitable for: Not suitable for high frequency applications
  • Status: Currently in production
  • Choice: Popular due to its high performance and low cost

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