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Same model may have multiple batches, images only for reference.
SI4378DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4378DY-T1-E3

Part No SI4378DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 19A 8-SOIC
Datasheet
SI4378DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 19A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.8V @ 250μA
Max Gate Charge 55nC @ 4.5V
Max Input Capacitance 8500pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.6W (Ta)
Maximum Rds On at Id,Vgs 2.7 mOhm @ 25A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 028468-SI4378DY-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4378DY-T1-E3 CAD Model

Description

The Vishay SI4378DY-T1-E3 is an N-Channel MOSFET transistor that is suitable for use in a wide range of applications.

  • Maximum Power Dissipation: 1.6W @ -55°C to 150°C
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 19A @ 25°C
  • Gate-Source Threshold Voltage: 1.8V @ 250μA
  • Maximum Gate Charge: 55nC @ 4.5V
  • Package: 8-SO
  • Supply and Demand: Limited

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Quantity Unit Price Ext. Price
25+ $2.3383 $58.4575
61+ $1.9187 $117.0407
94+ $1.8588 $174.7272
129+ $1.7988 $232.0452
167+ $1.7387 $290.3629
223+ $1.5589 $347.6347
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