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Same model may have multiple batches, images only for reference.
SI4390DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4390DY-T1-E3

Part No SI4390DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 8.5A 8SOIC
Datasheet
SI4390DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.8V @ 250μA
Max Gate Charge 15nC @ 4.5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.4W (Ta)
Maximum Rds On at Id,Vgs 9.5 mOhm @ 12.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 028471-SI4390DY-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4390DY-T1-E3 CAD Model

Description

The SI4390DY-T1-E3 is an active N-channel MOSFET manufactured by Vishay.

  • Power Dissipation: 1.4W (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 8.5A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 2.8V @ 250μA
  • Max Gate Charge: 15nC @ 4.5V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 9.5 mOhm @ 12.5A, 10V
  • Supply and Demand Status: Balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6722 $60.4980
210+ $0.5521 $115.9410
325+ $0.5348 $173.8100
450+ $0.5174 $232.8300
580+ $0.5001 $290.0580
775+ $0.4481 $347.2775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 156,494 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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