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Same model may have multiple batches, images only for reference.
SI4390DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4390DY-T1-GE3

Part No SI4390DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 8.5A 8SO  /  N-Channel 30 V 8.5A (Ta) 1.4W (Ta) Surface Mount 8-SOIC
Datasheet
SI4390DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 8.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.5mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 4.5 V
Vgs (Max) ±20V
Power Dissipation (Max) 1.4W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Product Number SI4390
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 2,500
Win Source Part Number 976695-SI4390DY-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI4390DY-T1-GE3 CAD Model

Description

The SI4390DY-T1-GE3 from Vishay Siliconix is an N-channel MOSFET designed for use in discrete semiconductor products such as transistors and MOSFETs.

  • Maximum Drain-Source Voltage: 30V
  • Maximum Continuous Drain Current: 8.5A
  • Low On-Resistance: 9.5mΩ
  • Gate Charge: 15nC @ 4.5V
  • Package: 8-SOIC
  • Operating Temperature Range: -55°C to +150°C

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