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SI4410BDY-T1-E3

Part No SI4410BDY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 7.5A 8-SOIC
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 20nC @ 5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.4W (Ta)
Maximum Rds On at Id,Vgs 13.5 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 028474-SI4410BDY-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4410BDY-T1-E3 CAD Model

Description

The SI4410BDY-T1-E3 is an N-channel MOSFET technology electronic component manufactured by Vishay.

  • Maximum Power Dissipation: 1.4W (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 7.5A (Ta)
  • Maximum Rds On @ Id,Vgs: 13.5 mOhm @ 10A, 10V
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1470 $51.6150
110+ $0.9412 $103.5320
165+ $0.9118 $150.4470
230+ $0.8824 $202.9520
295+ $0.8529 $251.6055
395+ $0.7647 $302.0565
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 56,627 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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