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Same model may have multiple batches, images only for reference.
SI4410BDY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4410BDY-T1-GE3

Part No SI4410BDY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 7.5A 8-SOIC
Datasheet
SI4410BDY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 20nC @ 5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.4W (Ta)
Maximum Rds On at Id,Vgs 13.5 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 093012-SI4410BDY-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4410BDY-T1-GE3 CAD Model

Description

The SI4410BDY-T1-GE3 is a MOSFET manufactured by Vishay.

  • Polarity: N-channel
  • Maximum Power Dissipation: 1.4W (Ta)
  • Case/Package: 8-SO
  • Mounting Type: SMD (SMT)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 7.5A (Ta)
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 13.5 mOhm @ 10A, 10V
  • Status: Active
  • Operating Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7875 $59.0625
180+ $0.6463 $116.3340
280+ $0.6260 $175.2800
385+ $0.6058 $233.2330
495+ $0.5856 $289.8720
660+ $0.5251 $346.5660
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Availability: 18,400 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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