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SI4425BDY-T1-E3

Part No SI4425BDY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 8.8A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 100nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 12 mOhm @ 11.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 028481-SI4425BDY-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4425BDY-T1-E3 CAD Model

Description

The Vishay 028481-SI4425BDY-T1-E3 is a P-Channel MOSFET that comes in an 8-SO package with a width of 3.90mm.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 8.8A
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Max Gate Charge: 100nC @ 10V
  • Maximum Rds On @ Id,Vgs: 12 mOhm @ 11.4A and 10V
  • Power Dissipation: 1.5W (Ta)
  • Temperature Range: -55°C to 150°C (TJ)
  • Suitable for: use in Discrete Semiconductor Products
  • Mounting: SMD (SMT) technology
  • Drive Voltage: 4.5V (Max Rds On) and 10V (Min Rds On)
  • Product Status: active
  • Popularity: medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $17.5940 $52.7820
7+ $14.4361 $101.0527
11+ $13.9850 $153.8350
15+ $13.5339 $203.0085
20+ $13.0828 $261.6560
26+ $11.7294 $304.9644
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,500 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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