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Same model may have multiple batches, images only for reference.
SI4451DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4451DY-T1-GE3

Part No SI4451DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 10A 8-SOIC / Trans MOSFET P-CH 12V 10A 8-Pin SOIC N T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series TrenchFET
Packaging Reel package
Channel Type Type P
Technology MOSFET
Drain Source Voltage 12V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Vgs(th) (Maximum) @ Id 800mV @ 850μA
Gate Charge (Qg) (Maximum) @ Vgs 120nC @ 4.5V
Vgs (Maximum) ±8V
Power Dissipation (Maximum) 1.5W (Ta)
Rds On (Maximum) @ Id, Vgs 8.25 mOhm @ 14A, 4.5V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package 8-SO
Package 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 794255-SI4451DY-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Family Name SI4451DY
Introduction Date February 15, 2003
ECCN EAR99
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian SI4451DY-T1-GE3 CAD Model

Description

The Vishay SI4451DY-T1-GE3 is a P-channel MOSFET.

  • Drain Current @ 25°C: 10A
  • Drain-Source Voltage: 12V
  • Gate-Source Threshold Voltage: 800mV @ 850μA
  • Gate Charge: 120nC @ 4.5V
  • Power Dissipation: 1.5W (Ta)
  • Maximum Rds On: 8.25 mOhm @ 14A, 4.5V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Mounting: SMD

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