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Same model may have multiple batches, images only for reference.
SI4532DY-T1-E3 Vishay
Same model may have multiple batches, images only for reference.

SI4532DY-T1-E3

Part No SI4532DY-T1-E3
Manufacturer Vishay
Catalog FETs - Arrays
Description MOSFET N/P-CH 30V 3.9A/3.5A 8-SO
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Arrays
Manufacturer Vishay
Packaging Reel(TR)
FET Type N and P-Channel
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.9A, 3.5A
Rds On (Max) @ Id, Vgs 65 mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Gate Charge (Qg) @ Vgs 15nC @ 10V
Input Capacitance (Ciss) @ Vds 235pF @ 10V
Power - Max 900mW
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style SMD/SMT
Package 8-SOIC (0.154", 3.90mm Width)
Manufacturer Device Package 8-SO
Win Source Part Number 189917-SI4532DY-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4532DY-T1-E3 CAD Model

Description

The Vishay SI4532DY-T1-E3 is an N and P-channel MOSFET transistor array with a drain to source voltage of 30V and a continuous drain current of 3.9A and 3.5A @ 25°C.

  • Maximum Rds On: 65 mOhm @ 3.9A and 10V
  • Gate Charge: 15nC @ 10V
  • Package: 8-SOIC
  • Input Capacitance: 235pF @ 10V
  • Operating Temperature: -55°C to 150°C
  • Packaging: Reel

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.9324 $52.7832
42+ $2.4061 $101.0562
65+ $2.3309 $151.5085
89+ $2.2557 $200.7573
115+ $2.1805 $250.7575
154+ $1.9549 $301.0546
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