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Same model may have multiple batches, images only for reference.
SI4590DY-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SI4590DY-T1-GE3

Part No SI4590DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P CHAN 100V SO8 DUAL / Trans MOSFET N/P-CH 100V 4.5A/2.5A 8-Pin SOIC N T/R
Datasheet
SI4590DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Series TrenchFET
Packaging Reel package
FET Type N and P-Channel
Drain Source Voltage 100V
Current - Continuous Drain (Id) @ 25°C 3.4A, 2.8A
Rds On (Maximum) @ Id, Vgs 57 mOhm @ 2A, 10V
Vgs(th) (Maximum) @ Id 2.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 11.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 360pF @ 50V
Power - Max 2.4W, 3.4W
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Package 8-SOIC (0.154", 3.90mm Width)
Manufacturer Package 8-SO
Win Source Part Number 794259-SI4590DY-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Family Name SI4590DY
ECCN EAR99
Country of Origin China
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian SI4590DY-T1-GE3 CAD Model

Description

The SI4590DY-T1-GE3 is a TrenchFET transistor manufactured by Vishay Siliconix.

  • Drain-Source Voltage: 100V
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Gate Charge: 11.5nC @ 10V
  • Input Capacitance: 360pF @ 50V
  • Maximum Rds On: 57 mOhm @ 2A, 10V
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $29.1045 $58.2090
5+ $23.8806 $119.4030
7+ $23.1344 $161.9408
9+ $22.3881 $201.4929
12+ $21.6418 $259.7016
16+ $19.4030 $310.4480
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 280 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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