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SI4628DY-T1-GE3

Part No SI4628DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 38A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 87nC @ 10V
Max Input Capacitance 3450pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.5W (Ta), 7.8W (Tc)
Maximum Rds On at Id,Vgs 3 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 028516-SI4628DY-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4628DY-T1-GE3 CAD Model

Description

The SI4628DY-T1-GE3 is a N-Channel MOSFET manufactured by Vishay.

  • Category: Discrete Semiconductor Products
  • Maximum power dissipation: 3.5W (Ta), 7.8W (Tc)
  • Drain-source breakdown voltage: 30V
  • Gate-source threshold voltage: 2.5V @ 1mA
  • Maximum gate charge: 87nC @ 10V
  • Maximum input capacitance: 3450pF @ 15V
  • Maximum Rds on @ Id, Vgs: 3 mOhm @ 20A, 10V

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