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Same model may have multiple batches, images only for reference.
SI4682DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4682DY-T1-GE3

Part No SI4682DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 16A 8SO  /  N-Channel 30 V 16A (Tc) 2.5W (Ta), 4.45W (Tc) Surface Mount 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.4mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1595 pF @ 15 V
Power Dissipation (Max) 2.5W (Ta), 4.45W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Product Number SI4682
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 2,500
Win Source Part Number 976340-SI4682DY-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI4682DY-T1-GE3 CAD Model

Description

The Vishay TrenchFET series SI4682DY-T1-GE3 is an N-channel MOSFET designed for use in a range of applications.

  • Maximum Drain to Source Voltage: 30V
  • Continuous Drain Current: 16A
  • Ideal for: Use in power supplies, motor control, and other applications
  • Mounting: 8-SOIC package
  • Package: Tape and reel
  • Reason for popularity: High reliability and performance

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