The HUFA75429D3S is an N-Channel Power MOSFET manufactured by Fairchild/ON Semiconductor. It is designed for high-speed switching applications and offers low on-resistance and gate charge.

Applications

• DC-DC converters
• Power inverters
• Motor control
• Uninterruptible Power Supplies (UPS)
• Synchronous Rectification
• Power Management in Servers and Telecom Equipment

Features

• Low on-resistance (RDS(on))
• High avalanche energy
• Fast switching speed
• High current capability
• Avalanche Rated
• RoHS compliant

Benefits

• Reduces power losses in switching applications
• Increases efficiency in power converters
• Simplifies thermal management with low RDS(on)
• Enhances system reliability with high avalanche ruggedness
• Suitable for high-frequency switching applications

Additional Details

The HUFA75429D3S features a drain-source voltage (VDS) of 75V and a continuous drain current (ID) of 46A. It exhibits a low on-resistance RDS(on) of 0.021 Ohms at VGS = 10V. The fast switching speed minimizes switching losses and improves overall efficiency. The high avalanche energy rating ensures robust performance under transient conditions. The device is available in a D2PAK package, which facilitates efficient heat dissipation. This MOSFET is commonly used in power supplies, motor drives, and other power electronic applications. Its low gate charge reduces driving requirements and simplifies the gate drive circuitry. The HUFA75429D3S is designed to operate over a wide temperature range. It is a popular choice for designers looking for a high-performance and reliable power MOSFET. The device is also suitable for synchronous rectification applications, where its low on-resistance contributes to increased efficiency. The D2PAK package allows for surface mounting, which simplifies board assembly. The HUFA75429D3S offers a cost-effective solution for high-power switching applications.