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SI4688DY-T1-GE3

Part No SI4688DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 8.9A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 1580pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.4W (Ta)
Maximum Rds On at Id,Vgs 11 mOhm @ 12A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 121035-SI4688DY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4688DY-T1-GE3 CAD Model

Description

The Vishay SI4688DY-T1-GE3 is an N-channel MOSFET that is designed for use in a variety of applications.

  • Maximum drain-source breakdown voltage: 30V
  • Continuous drain current: 8.9A @ 25°C
  • Mounting: Surface mount technology
  • Package: 8-SOIC
  • Gate-source threshold voltage: 3V @ 250μA
  • Maximum gate charge: 38nC @ 10V
  • Maximum input capacitance: 1580pF @ 15V
  • Maximum gate-source voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 11 mOhm @ 12A, 10V
  • Category: Discrete semiconductor product
  • Status: Obsolete (EOL)
  • Supply and demand status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0367 $62.2020
140+ $0.8507 $119.0980
215+ $0.8240 $177.1600
290+ $0.7974 $231.2460
375+ $0.7708 $289.0500
505+ $0.6912 $349.0560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 296 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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