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SI4774DY-T1-GE3

Part No SI4774DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 16A 8SO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 1mA
Max Gate Charge 14.3nC @ 4.5V
Max Input Capacitance 1025pF @ 15V
Maximum Gate-Source Voltage ±20V
FET Feature Schottky Diode (Body)
Power Dissipation (Max) 5W (Tc)
Maximum Rds On at Id,Vgs 9.5 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TA)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1096006-SI4774DY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4774DY-T1-GE3 CAD Model

Description

The Vishay 1096006-SI4774DY-T1-GE3 MOSFET is a Schottky diode (body) N-channel FET that operates @ a maximum power dissipation of 5W (Tc).

  • Power Dissipation: 5W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 16A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2.3V @ 1mA
  • Maximum Gate Charge: 14.3nC @ 4.5V
  • Maximum Rds On @ Id, Vgs: 9.5 mOhm @ 10A, 10V
  • Package: 8-SO
  • Temperature Range: -55°C to 150°C (TA)
  • Ideal for: Use in discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.5536 $58.1280
255+ $0.4543 $115.8465
395+ $0.4401 $173.8395
545+ $0.4259 $232.1155
705+ $0.4118 $290.3190
940+ $0.3691 $346.9540
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,200 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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