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SI4816BDY-T1-E3

Part No SI4816BDY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 5.8A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Half Bridge)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5.8A, 8.2A
Maximum Rds On at Id,Vgs 18.5 mOhm @ 6.8A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 10nC @ 5V
Maximum Power Dissipation 1W, 1.25W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 028528-SI4816BDY-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name Si4816BDY
Introduction Date October 28, 2004
ECCN EAR99
Halogen Free Not Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian SI4816BDY-T1-E3 CAD Model

Description

This electronic component is a Si4816BDY-T1-E3 manufactured by Vishay.

  • Win Source Part Number: 028528
  • Category: Discrete Semiconductor Products
  • Features: Advanced features and specifications, can deliver high performance and speed, easy to integrate and use in different systems.
  • Maximum Power Dissipation: 1W, 1.25W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 5.8A, 8.2A @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 10nC @ 5V
  • Recommendation: Great option to consider if you are looking for a reliable and efficient component

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6532 $52.2560
165+ $0.6111 $100.8315
255+ $0.5900 $150.4500
370+ $0.5479 $202.7230
475+ $0.5268 $250.2300
595+ $0.5058 $300.9510
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,690 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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