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Same model may have multiple batches, images only for reference.
SI4823DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4823DY-T1-E3

Part No SI4823DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 4.1A 8-SOIC
Datasheet
SI4823DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 660pF @ 10V
Maximum Gate-Source Voltage ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.7W (Ta), 2.8W (Tc)
Maximum Rds On at Id,Vgs 108 mOhm @ 3.3A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 211654-SI4823DY-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI4823DY-T1-E3 CAD Model

Description

The Vishay SI4823DY-T1-E3 is a MOSFET that has a Schottky diode (isolated) feature.

  • Device Type: P-channel
  • Maximum Power Dissipation: 1.7W (Ta) and 2.8W (Tc)
  • Popularity: Medium
  • Supply and Demand Status: Sufficient
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Rds On @ Id,Vgs: 108 mOhm @ 3.3A, 4.5V
  • Package: 8-SOIC package
  • Dimension: 0.154"
  • Width: 3.90mm

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.3361 $58.8175
420+ $0.2760 $115.9200
650+ $0.2680 $174.2000
895+ $0.2587 $231.5365
1,155+ $0.2506 $289.4430
1,550+ $0.2241 $347.3550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,500 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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