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Same model may have multiple batches, images only for reference.
IRF1010NSPBF
Same model may have multiple batches, images only for reference.

IRF1010NSPBF

Part No IRF1010NSPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 85A D2PAK
Datasheet
IRF1010NSPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 120nC @ 10V
Max Input Capacitance 3210pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 180W (Tc)
Maximum Rds On at Id,Vgs 11 mOhm @ 43A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 205282-IRF1010NSPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF1010NSPBF CAD Model

Description

The Infineon Technologies 205282-IRF1010NSPBF is a medium-popularity electronic component with limited supply and demand status.

  • Technology: MOSFET
  • Category: Discrete semiconductor products
  • Maximum Power Dissipation: 180W (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Recommendation: Not Recommended for New Designs
  • Operating Temperature Range: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.5042 $52.6470
85+ $1.2343 $104.9155
130+ $1.1957 $155.4410
175+ $1.1571 $202.4925
225+ $1.1186 $251.6850
300+ $1.0028 $300.8400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,936 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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