The SI4828DY-T1-GE3 is a P-Channel 30 V (D-S) MOSFET from Vishay. This device is engineered for optimal efficiency and performance in power management applications. It is designed to minimize conduction losses with its low on-resistance and fast switching speeds. This MOSFET comes in a PowerPAK® SO-8 package, ensuring a compact footprint and excellent thermal performance.

Applications

• Power Management in Portable Devices
• DC-DC Converters
• Load Switching
• Battery Management Systems
• Motor Control Applications

Features

• P-Channel MOSFET
• Voltage Rating: 30V
• Low On-Resistance (RDS(on))
• Low Gate Charge (Qg)
• PowerPAK® SO-8 Package
• Lead (Pb)-free and RoHS Compliant

Benefits

• Increased Efficiency: Low on-resistance reduces power loss, resulting in higher energy efficiency in power switching applications.
• Compact Design: The PowerPAK® SO-8 package allows for a smaller footprint, which is ideal for portable and space-constrained designs.
• Improved Thermal Performance: The PowerPAK® package provides excellent thermal conductivity, enabling efficient heat dissipation and higher power handling capabilities.
• Reliable Operation: Robust design ensures stable and reliable performance in demanding applications.
• Environmentally Friendly: Lead (Pb)-free and RoHS compliant, contributing to environmentally conscious product designs.

Additional Details

The SI4828DY-T1-GE3's performance characteristics include a low gate threshold voltage, enabling compatibility with low-voltage logic circuits. The maximum drain current depends on the operating temperature and thermal conditions. It's crucial to implement appropriate thermal management techniques to maintain the device within its safe operating area. The device is designed to be compliant with RoHS standards. The MOSFET is characterized by key specifications such as a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V. The on-resistance (RDS(on)) is specified at different gate-source voltage levels to allow for optimal circuit performance. This MOSFET uses advanced trench technology to provide superior switching performance and withstand high energy pulses. The 'GE3' suffix indicates its lead-free and RoHS compliance.