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Same model may have multiple batches, images only for reference.
SI4835BDY-T1-E3 Vishay
Same model may have multiple batches, images only for reference.

SI4835BDY-T1-E3

Part No SI4835BDY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 7.4A 8-SOIC
Datasheet
SI4835BDY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 37nC @ 5V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 18 mOhm @ 9.6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 099761-SI4835BDY-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI4835BDY-T1-E3 CAD Model

Description

The SI4835BDY-T1-E3 is a P-channel MOSFET transistor manufactured by Vishay that is designed for use in various electronic circuits.

  • Maximum Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 7.4A
  • Maximum On-Resistance: 18 mOhm @ 9.6A and 10V
  • Ideal for: Low voltage and low current applications.
  • Package: 8-SOIC
  • Maximum Power Dissipation: 1.5W @ 25°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
315+ $0.1848 $58.2120
760+ $0.1525 $115.9000
1,175+ $0.1478 $173.6650
1,615+ $0.1432 $231.2680
2,105+ $0.1374 $289.2270
2,805+ $0.1236 $346.6980
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27,530 pieces
MOQ: 315 pcs
Order Increment : 1 pcs
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