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Same model may have multiple batches, images only for reference.
SI4829DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4829DY-T1-GE3

Part No SI4829DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 2A 8-SOIC
Datasheet
SI4829DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 8nC @ 10V
Max Input Capacitance 210pF @ 10V
Maximum Gate-Source Voltage ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 2W (Ta), 3.1W (Tc)
Maximum Rds On at Id,Vgs 215 mOhm @ 2.5A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 028531-SI4829DY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4829DY-T1-GE3 CAD Model

Description

The Vishay SI4829DY-T1-GE3 is a P-channel MOSFET with a drain-source breakdown voltage of 20V and a maximum continuous drain current of 2A.

  • Maximum On-Resistance: 215mΩ
  • Gate-Source Threshold Voltage: 1.5V
  • Ideal for: Low-voltage applications such as battery-powered devices and portable electronics
  • Manufacturer: Vishay

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Pricing & Ordering

Quantity Unit Price Ext. Price
290+ $0.2021 $58.6090
695+ $0.1663 $115.5785
1,080+ $0.1605 $173.3400
1,485+ $0.1559 $231.5115
1,925+ $0.1502 $289.1350
2,565+ $0.1351 $346.5315
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,500 pieces
MOQ: 290 pcs
Order Increment : 1 pcs
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