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Same model may have multiple batches, images only for reference.
SI4882DY-T1
Same model may have multiple batches, images only for reference.

SI4882DY-T1

Part No SI4882DY-T1
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFETs 30V 11A 2.5W
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SO
Continuous Drain Current (ID) 11 A
Drain to Source Breakdown Voltage 30 V
Drain to Source Resistance 10.5 mΩ
Drain to Source Voltage (Vdss) 30 V
Element Configuration Single
Fall Time 19 ns
Gate to Source Voltage (Vgs) 25 V
Height 1.55 mm
Length 5 mm
Maximum Operating Temperature 150 °C
Max Power Dissipation 2.5 W
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Channels 1
Number of Pins 8
Power Dissipation 2.5 W
Radiation Hardening No
Rise Time 8 ns
RoHS Compliant
Turn-Off Delay Time 45 ns
Turn-On Delay Time 13 ns
Weight 186.993455 mg
Width 4 mm
Win Source Part Number 1092884-SI4882DY-T1
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SI4882DY-T1 CAD Model

Description

Vishay SI4882DY-T1 is a MOSFET transistor.

  • Drain to Source Voltage (Vdss): 30 V
  • Power Dissipation: 2.5 W
  • Channels: 1
  • Pins: 8
  • Rise Time: 8 ns
  • Fall Time: 19 ns
  • Mounting Type: SMD (SMT)
  • Case/Package: SO
  • Maximum Operating Temperature: 150 °C
  • Minimum Operating Temperature: -55 °C
  • RoHS Compliant: Yes
  • Application: Transistors - FETs and MOSFETs - RF

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