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Same model may have multiple batches, images only for reference.
SI4888DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4888DY-T1-E3

Part No SI4888DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11A 8-SOIC
Datasheet
SI4888DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.6V @ 250μA
Max Gate Charge 24nC @ 5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.6W (Ta)
Maximum Rds On at Id,Vgs 7 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 116439-SI4888DY-T1-E3
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI4888DY-T1-E3 CAD Model

Description

The Vishay SI4888DY-T1-E3 is a MOSFET semiconductor product that is suitable for various applications.

  • Win Source Part Number: 116439-SI4888DY-T1-E3
  • Supply and Demand Status: designed to provide limited supply and demand status
  • Maximum Power Dissipation: 1.6W
  • Drain-Source Breakdown Voltage: 30V
  • Manufacturer: Vishay
  • Category: Discrete Semiconductor Products
  • Applications: ideal for use in industrial and power management applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3234 $58.2120
435+ $0.2657 $115.5795
675+ $0.2576 $173.8800
930+ $0.2495 $232.0350
1,200+ $0.2414 $289.6800
1,605+ $0.2160 $346.6800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 77,800 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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